IPB020N10N5ATMA1

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IPB020N10N5ATMA1

Manufacturer part number:IPB020N10N5ATMA1

Manufacturer:Infineon Technologies

Description:IPB020N10N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB020N10N5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	33 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 270μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	15600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	979 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead