CSD19538Q2

new-10%

Manufacturer part number:CSD19538Q2

Manufacturer:Texas Instruments

Description:CSD19538Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD19538Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Base Part Number	CSD19538
Number of Elements	1
Power Dissipation-Max	2.5W Ta 20.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	59m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	454pF @ 50V
Current - Continuous Drain (Id) @ 25°C	14.4A Ta
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	14.4A
Drain-source On Resistance-Max	0.072Ohm
Pulsed Drain Current-Max (IDM)	34.4A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	8 mJ
Length	2mm
Width	2mm
Thickness	750μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free