IRF2804SPBF Description
The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of other applications.
IRF2804SPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRF2804SPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
