IRF2804SPBF Description

The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of other applications.

IRF2804SPBF Features

• Advanced Process Technology

• Ultra-Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

IRF2804SPBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial