SUM33N20-60P-E3

new-10%

Manufacturer part number:SUM33N20-60P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 33A D2PAK

Case Package:SOT-23

Datasheet:SUM33N20-60P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.12W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	59m Ω @ 20A, 15V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2735pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	113nC @ 15V
Rise Time	170ns
Drive Voltage (Max Rds On,Min Rds On)	10V 15V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	26 ns
Reverse Recovery Time	114 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.144Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	80A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	20 mJ
Nominal Vgs	4.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant