Name: IRFS59N10DTRLP
Brand: Infineon Technologies
SKU: IRFS59N10DTRLP
Availability: InStock

new-10%

IRFS59N10DTRLP

Manufacturer part number:IRFS59N10DTRLP

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 59A D2PAK

Case Package:SOT-23

Datasheet:IRFS59N10DTRLP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	25mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	59A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.8W Ta 200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 35.4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	59A Tc
Gate Charge (Qg) (Max) @ Vgs	114nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	59A
Threshold Voltage	5.5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Nominal Vgs	5.5 V
Height	4.826mm
Length	10.668mm
Width	10.54mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

About IRFS59N10DTRLP

The IRFS59N10DTRLP from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 59A D2PAK.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFS59N10DTRLP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.