IRF3000 Description

IRF3000 is a 300V N-MOSFET HEXFET MOSFET. The IRF3000 can replace electromechanical relays in many telecommunications and networking applications. As it is a solid-state semiconductor device with no mechanical parts, it increases the reliability of the entire system while being 30% smaller than an electromechanical relay.

The IRF3000 is more efficient than electromechanical relays, with an open-state resistance 90% lower than electromechanical relays, minimizing conduction losses. The ultra-low gate charge in turn minimizes switching losses. The IRF3000 is easier to drive than an electromechanical relay, simplifying the circuit and reducing system costs.

IRF3000 Features

• Type Designator: IRF3000

• Type of Transistor: MOSFET

• Type of Control Channel: N -Channel

• Maximum Power Dissipation (Pd): 2.5 W

• Maximum Drain-Source Voltage |Vds|: 300 V

• Maximum Gate-Source Voltage |Vgs|: 30 V

• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

• Maximum Drain Current |Id|: 1.6 A

• Maximum Junction Temperature (Tj): 150 °C

• Rise Time (tr): 7.2 nS

• Drain-Source Capacitance (Cd): 940 pF

• Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

• Package: SO8

IRF3000 Applications

• High-frequency DC-DC converters

• DC to DC Converter  

• Switched Mode Power Supplies

• Motor Drivers

• Battery charger circuits