FDN338P_G

new-10%

Manufacturer part number:FDN338P_G

Manufacturer:ON Semiconductor

Description:INTEGRATED CIRCUIT

Case Package:SOT-23

Datasheet:FDN338P_G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	500mW Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	451pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V