IRF3610STRLPBF

new-10%

Manufacturer part number:IRF3610STRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 103A D2PAK

Case Package:SOT-23

Datasheet:IRF3610STRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	333W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.6m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5380pF @ 25V
Current - Continuous Drain (Id) @ 25°C	103A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drain to Source Voltage (Vdss)	100V
Continuous Drain Current (ID)	103A
Drain-source On Resistance-Max	0.0116Ohm
Pulsed Drain Current-Max (IDM)	410A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	460 mJ
RoHS Status	ROHS3 Compliant