IRF5210PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF5210PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
60mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
-40A
[email protected] Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
86ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
81 ns
Turn-Off Delay Time
79 ns
Continuous Drain Current (ID)
-40A
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-100V
Dual Supply Voltage
-100V
Avalanche Energy Rating (Eas)
780 mJ
Recovery Time
260 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
-4 V
Height
19.8mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.81000
$2.81
10
$2.55000
$25.5
100
$2.07870
$207.87
500
$1.64970
$824.85
IRF5210PBF Product Details
IRF5210PBF Description
IRF5210PBF is a 100V Single P-Channel Power MOSFET in a TO-220 package. The IRF5210PBF MOSFET power MOSFETs are made with proven silicon techniques and can be used in a variety of applications including DC motors, inverters, SMPS, lights, and load switches, and battery-powered applications. For ease of design, the IRF5210PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints.
IRF5210PBF Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz