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IRF5210PBF

IRF5210PBF

IRF5210PBF

Infineon Technologies

IRF5210PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRF5210PBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 60mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating -40A
[email protected] Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 86ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 79 ns
Continuous Drain Current (ID) -40A
Threshold Voltage -4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage -100V
Avalanche Energy Rating (Eas) 780 mJ
Recovery Time 260 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 19.8mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.81000 $2.81
10 $2.55000 $25.5
100 $2.07870 $207.87
500 $1.64970 $824.85
1,000 $1.39230 $1.3923
IRF5210PBF Product Details

IRF5210PBF Description

IRF5210PBF is a 100V Single P-Channel Power MOSFET in a TO-220 package. The IRF5210PBF MOSFET power MOSFETs are made with proven silicon techniques and can be used in a variety of applications including DC motors, inverters, SMPS, lights, and load switches, and battery-powered applications. For ease of design, the IRF5210PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints.


IRF5210PBF Features

  • Planar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100kHz

  • Industry-standard through-hole power package

  • High-current rating


IRF5210PBF Applications

  • Switching applications

  • Brushed motor drive applications

  • BLDC motor drive applications

  • Battery-powered circuits

  • Resonant mode power supplies

  • OR-ing and redundant power switches

  • DC/DC  and  AC/DC  converters

  • DC/AC inverters

  • Half-bridge and full-bridge topologies

  • Synchronous rectifier applications





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