Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF5305STRLPBF

IRF5305STRLPBF

IRF5305STRLPBF

Infineon Technologies

P-Channel Tape & Reel (TR) 60m Ω @ 16A, 10V ±20V 1200pF @ 25V 63nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF5305STRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 60mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -31A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Avalanche Energy Rating (Eas) 280 mJ
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 5.084mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.81000 $1.81
500 $1.7919 $895.95
1000 $1.7738 $1773.8
1500 $1.7557 $2633.55
2000 $1.7376 $3475.2
2500 $1.7195 $4298.75
IRF5305STRLPBF Product Details

IRF5305STRLPBF Description


IRF5305STRLPBF is a P-channel MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF5305STRLPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRF5305STRLPBF has 3 pins and it is available in Tape & Reel packaging way.



IRF5305STRLPBF Features


  • Max Junction Temperature (Tj): 175°C

  • Avalanche Energy Rating (Eas): 280 mJ

  • Drain to Source Breakdown Voltage: -55V

  • Continuous Drain Current (ID): -31A



IRF5305STRLPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News