IRFL024ZTRPBF

new-10%

IRFL024ZTRPBF

Manufacturer part number:IRFL024ZTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 5.1A SOT223

Case Package:SOT-23

Datasheet:IRFL024ZTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	57.5MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	7.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57.5m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.1A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	5.1A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Nominal Vgs	4 V
Height	1.4478mm
Length	6.6802mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free