SI1411DH-T1-GE3

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Manufacturer part number:SI1411DH-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 150V 420MA SC70

Case Package:SOT-23

Datasheet:SI1411DH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C	420mA Ta
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	420mA
Drain Current-Max (Abs) (ID)	0.42A
Drain-source On Resistance-Max	2.7Ohm
DS Breakdown Voltage-Min	150V
RoHS Status	ROHS3 Compliant