IRF6644TRPBF

new-10%

Manufacturer part number:IRF6644TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 10.3A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6644TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MN
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	10.3A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id	4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	8.3A
Threshold Voltage	4.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	228A
Avalanche Energy Rating (Eas)	86 mJ
Nominal Vgs	4.8 V
Height	508μm
Length	6.35mm
Width	5.0546mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free