IRF7105TRPBF         Description

 The fifth generation HEXFET from the international rectifier uses advanced processing technology to achieve the lowest possible on-resistance per silicon area. Combined with fast switching speed and rugged device characteristics, HEXFETPower MOSFET is well known, providing designers with an extremely efficient device for use in a variety of applications.SO-8 is improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it an ideal choice for a variety of power applications. Through these improvements, multiple devices can be used in applications that significantly reduce circuit board space. The package is designed for vapor phase infrared or wave soldering technology. In typical PCB placement applications, it is possible to consume more than 0.8W.

IRF7105TRPBF         Features

Advanced Process Technology

Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

IRF7105TRPBF         Applications

providing designers with an extremely efficient device for use in a variety of applications.