FDG6306P

new-10%

Manufacturer part number:FDG6306P

Manufacturer:ON Semiconductor

Description:FDG6306P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDG6306P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Current Rating	-600mA
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	5.5 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	114pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	6 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	-1.2V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free