IRF7201 Description

International Rectifier's Fifth Generation HEXFET? power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET MOSFETs are widely known for.

The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, it is possible to dissipate more power than 0.8W.

IRF7201 Features

• Generation V Technology

• Ultra Low On-Resistance

• N-Channel MOSFET

• Surface Mount

• Available in Tape & Reel

• Dynamic dv/dt Rating

• Fast Switching

• Lead-Free

IRF7201 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial