FDW252P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDW252P Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
12.5MOhm
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Current Rating
-8.8A
Number of Elements
1
Power Dissipation-Max
1.3W Ta
Power Dissipation
1.3W
Turn On Delay Time
8 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
12.5m Ω @ 8.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5045pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8.8A Ta
Gate Charge (Qg) (Max) @ Vgs
66nC @ 4.5V
Rise Time
14ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
8.8A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Height
1mm
Length
3mm
Width
4.4mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.992275
$0.992275
10
$0.936109
$9.36109
100
$0.883121
$88.3121
500
$0.833133
$416.5665
1000
$0.785975
$785.975
FDW252P Product Details
FDW252P Description
FDW252P is a kind of P-channel 2.5V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench technology for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).