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IRF7303TRPBF

IRF7303TRPBF

IRF7303TRPBF

Infineon Technologies

IRF7303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7303TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.9A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRF7303PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 21ns
Fall Time (Typ) 7.7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 4.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 71 ns
FET Feature Standard
Nominal Vgs 1 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.33894 $1.35576
8,000 $0.31556 $2.52448
12,000 $0.30388 $3.64656
28,000 $0.29750 $8.33
IRF7303TRPBF Product Details

IRF7303TRPBF Description


The Fifth Generation HEXFETs from International Rectifier use cutting-edge processing techniques to create incredibly low on-resistance per silicon area. With the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly effective and dependable device for use in a variety of applications. The new Micro8 package, with a footprint area that is half that of the conventional SO-8, delivers the smallest footprint of any SOIC design. The Micro8 is the ideal tool since in many applications printed circuit board space is at a premium. Thanks to its low profile, the Micro8 will easily fit into extremely small application contexts like portable devices and PCMCIA cards (1.1mm).



IRF7303TRPBF Features


? Technology of the Generation


? Extremely Low On Resistance


? Double-N-Channel MOSFET


? Very Tiny SOIC Package


? Low Profile (around 1.1mm)


? Sold on reel-to-reel tape


? Rapid Switching


? Lead-Free



IRF7303TRPBF Applications


Switching applications


Related Part Number

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