IRF7303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
SOT-23
IRF7303TRPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.9A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRF7303PBF
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
6.8 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
21ns
Fall Time (Typ)
7.7 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
4.9A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Recovery Time
71 ns
FET Feature
Standard
Nominal Vgs
1 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.33894
$1.35576
8,000
$0.31556
$2.52448
12,000
$0.30388
$3.64656
28,000
$0.29750
$8.33
IRF7303TRPBF Product Details
IRF7303TRPBF Description
The Fifth Generation HEXFETs from International Rectifier use cutting-edge processing techniques to create incredibly low on-resistance per silicon area. With the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly effective and dependable device for use in a variety of applications. The new Micro8 package, with a footprint area that is half that of the conventional SO-8, delivers the smallest footprint of any SOIC design. The Micro8 is the ideal tool since in many applications printed circuit board space is at a premium. Thanks to its low profile, the Micro8 will easily fit into extremely small application contexts like portable devices and PCMCIA cards (1.1mm).