SI3993CDV-T1-GE3

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Manufacturer part number:SI3993CDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI3993CDV-T1-GE3 Dual P-channel MOSFET Transistor; 2.3 A; 30 V; 6-Pin TSOP

Case Package:SOT-23

Datasheet:SI3993CDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	1.4W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	111m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.9A
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	-2.9A
Threshold Voltage	-1.2V
JEDEC-95 Code	MO-193AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.111Ohm
Drain to Source Breakdown Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Nominal Vgs	-1.2 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free