DMN2016LFG-7

new-10%

Manufacturer part number:DMN2016LFG-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 5.2A 8UDFN

Case Package:SOT-23

Datasheet:DMN2016LFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerUDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	18mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	770mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN2016L
Reference Standard	AEC-Q101
JESD-30 Code	S-PDSO-N5
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.6 ns
FET Type	2 N-Channel (Dual) Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1472pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	13.2ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	46.8 ns
Turn-Off Delay Time	84.5 ns
Continuous Drain Current (ID)	5.2A
Gate to Source Voltage (Vgs)	8V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free