IRF7328TRPBF

new-10%

IRF7328TRPBF

Manufacturer part number:IRF7328TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2P-CH 30V 8A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7328TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	21MOhm
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-8A
Base Part Number	IRF7328PBF
Number of Elements	2
Row Spacing	6.3 mm
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	13 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2675pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	98 ns
Turn-Off Delay Time	198 ns
Continuous Drain Current (ID)	-8A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	56 ns
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	-2.5 V
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free