IRF7904TRPBF

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Manufacturer part number:IRF7904TRPBF

Manufacturer:Infineon Technologies

Description:IRF7904TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7904TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	16.2MOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	IRF7904PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Power - Max	1.4W 2W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.6A 11A
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
4,000	$0.45413	$1.81652
8,000	$0.43391	$3.47128
12,000	$0.41948	$5.03376

IRF7904TRPBF Description

International Rectifier's Fifth Generation HEXFETs use state-of-the-art manufacturing techniques to generate extremely low on-resistance per silicon area. The designe is provided with an extraordinarily efficient and reliable device for use in a variety of applications thanks to this feature as well as the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is ideal for a range of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. The use of a leadframe that was especially created allowed for this alteration. This innovation significantly reduces the amount of board space required while enabling the use of several devices. The package is meant to be used in conjunction with vapor phase infrared technology or wave soldering.