IRF7351TRPBF

new-10%

Manufacturer part number:IRF7351TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 60V 8A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7351TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	IRF7351PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	5.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.8m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	5.9ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	6.7 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	64A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free