SI7956DP-T1-GE3

new-10%

Manufacturer part number:SI7956DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 150V 2.6A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7956DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	1.4W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7956
Pin Count	8
JESD-30 Code	R-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	36ns
Drain to Source Voltage (Vdss)	150V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.105Ohm
Drain to Source Breakdown Voltage	150V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free