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IRF7402PBF

IRF7402PBF

IRF7402PBF

Infineon Technologies

MOSFET N-CH 20V 6.8A 8-SOIC

SOT-23

IRF7402PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 35MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 6.8A
Number of Elements 1
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 5.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.8A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 6.8A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 650pF
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
Nominal Vgs 700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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