IRF7410PBF

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IRF7410PBF

Manufacturer part number:IRF7410PBF

Manufacturer:Infineon Technologies

Description:IRF7410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7410PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 16A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8676pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	91nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	16A
Drain-source On Resistance-Max	0.007Ohm
Pulsed Drain Current-Max (IDM)	65A
DS Breakdown Voltage-Min	12V
RoHS Status	ROHS3 Compliant