APTM100UM45FAG

new-10%

Manufacturer part number:APTM100UM45FAG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1000V 215A SP6

Case Package:SOT-23

Datasheet:APTM100UM45FAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	52mOhm
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	2
JESD-30 Code	R-PUFM-X2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5000W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5kW
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 107.5A, 10V
Vgs(th) (Max) @ Id	5V @ 30mA
Input Capacitance (Ciss) (Max) @ Vds	42700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	215A Tc
Gate Charge (Qg) (Max) @ Vgs	1602nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	215A
Gate to Source Voltage (Vgs)	30V
Avalanche Energy Rating (Eas)	3200 mJ
Height	15mm
Length	108mm
Width	62mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free