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IRF7811WGTRPBF

IRF7811WGTRPBF

IRF7811WGTRPBF

Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

SOT-23

IRF7811WGTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Power Dissipation 3.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2335pF @ 16V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 12V
Input Capacitance 2.335nF
Rds On Max 12 mΩ
RoHS Status RoHS Compliant

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