SI7252DP-T1-GE3

new-10%

Manufacturer part number:SI7252DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 100V 36.7A PPAK 8SO

Case Package:SOT-23

Datasheet:SI7252DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2006
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	46W
Terminal Form	C BEND
Base Part Number	SI7252
JESD-30 Code	R-PDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1170pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	36.7A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.017Ohm
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.12mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant