STS8DNF3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website
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STS8DNF3LL Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e4
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
20mOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
1.6W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STS8DN
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
18 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Rise Time
32ns
Fall Time (Typ)
11 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.238203
$0.238203
10
$0.224720
$2.2472
100
$0.212000
$21.2
500
$0.200000
$100
1000
$0.188679
$188.679
STS8DNF3LL Product Details
STS8DNF3LL Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.