SH8J31GZETB

new-10%

Manufacturer part number:SH8J31GZETB

Manufacturer:ROHM Semiconductor

Description:60V PCH+PCH MIDDLE POWER MOSFET

Case Package:SOT-23

Datasheet:SH8J31GZETB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	2W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	0.085Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	14 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant