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IRF9520NSPBF

IRF9520NSPBF

IRF9520NSPBF

Infineon Technologies

IRF9520NSPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF9520NSPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 480mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -6.8A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 27A
Recovery Time 150 ns
Nominal Vgs -4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRF9520NSPBF Product Details

IRF9520NSPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has -6.8A continuous drain current (ID).When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 27A, its maximum pulsed drain current.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In this case, the threshold voltage of the transistor is -4V, which means that it will not activate any of its functions when its threshold voltage reaches -4V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF9520NSPBF Features


a continuous drain current (ID) of -6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 27A.
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)

IRF9520NSPBF Applications


There are a lot of Infineon Technologies IRF9520NSPBF applications of single MOSFETs transistors.

  • LCD/LED TV
  • Power Tools
  • LCD/LED/ PDP TV Lighting
  • Load switching
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC-to-DC converters
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Solar Inverter
  • General Purpose Interfacing Switch

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