IRFB4215PBF

new-10%

Manufacturer part number:IRFB4215PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 115A TO-220AB

Case Package:SOT-23

Datasheet:IRFB4215PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	9Ohm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	115A
Number of Elements	1
Power Dissipation-Max	270W Tc
Element Configuration	Single
Power Dissipation	270W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9mOhm @ 54A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	160ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	115A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Input Capacitance	4.08nF
Drain to Source Resistance	9mOhm
Rds On Max	9 mΩ
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free