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IRFH7440TRPBF

IRFH7440TRPBF

IRFH7440TRPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m Ω @ 50A, 10V ±20V 4574pF @ 25V 138nC @ 10V 8-PowerTDFN

SOT-23

IRFH7440TRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 2.4MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Number of Channels 1
Power Dissipation-Max 104W Tc
Power Dissipation 104W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4574pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 85A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 150°C
Height 1.05mm
Length 5.85mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.70290 $2.8116
8,000 $0.67162 $5.37296
12,000 $0.64927 $7.79124
IRFH7440TRPBF Product Details

IRFH7440TRPBF Description


The IRFH7440TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7440TRPBF is suitable for PWM inverter topologies, battery-powered circuits, half-bridge, and full-bridge topologies, electronic ballast applications, and synchronous rectifier applications.



IRFH7440TRPBF Features


  • Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • RoHS Compliant containing no Lead, no Bromide, and no Halogen

  • Operating Junction and Storage Temperature Range: -55 to 150℃



IRFH7440TRPBF Applications


  • PWM inverter topologies

  • Battery-powered circuits

  • Half-bridge and full-bridge topologies

  • Electronic ballast applications 

  • Synchronous rectifier applications


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