IRFS3004-7PPBF

new-10%

Manufacturer part number:IRFS3004-7PPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 240A D2PAK-7

Case Package:SOT-23

Datasheet:IRFS3004-7PPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.25MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.25m Ω @ 195A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9130pF @ 25V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	240ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	160 ns
Turn-Off Delay Time	91 ns
Continuous Drain Current (ID)	400A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	240A
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	290 mJ
Height	4.572mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free