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2SK2916(F)

2SK2916(F)

2SK2916(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO-3PN

SOT-23

2SK2916(F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P(N)IS
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Power Dissipation 80W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 106ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 89 ns
Turn-Off Delay Time 108 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 2.6nF
Drain to Source Resistance 400mOhm
Rds On Max 400 mΩ
RoHS Status RoHS Compliant

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