IRFD9210

new-10%

Manufacturer part number:IRFD9210

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 200V 0.4A 4-DIP

Case Package:SOT-23

Datasheet:IRFD9210 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Power Dissipation	1W
Turn On Delay Time	8 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	170pF @ 25V
Current - Continuous Drain (Id) @ 25°C	400mA Ta
Gate Charge (Qg) (Max) @ Vgs	8.9nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	400mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-200V
Input Capacitance	170pF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant