IRFS3006TRL7PP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFS3006TRL7PP Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
HEXFET®
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
2.1MOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G6
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
375W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
375W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.1m Ω @ 168A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
240A Tc
Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V
Rise Time
61ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
69 ns
Turn-Off Delay Time
118 ns
Continuous Drain Current (ID)
240A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
303 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$3.16720
$2533.76
1,600
$2.97785
$2.97785
2,400
$2.84531
$5.69062
IRFS3006TRL7PP Product Details
IRFS3006TRL7PP Description
IRFS3006TRL7PP is a TO-263-7, D2Pak (6 Leads + Tab), TO-263CB single N-Channel 60 V 2.1 mOhm 300 NC HEXFET? Power Mosfet. It can be utilized in SMPS, uninterruptible power supplies, high-speed power switching, hard switched, and high-frequency circuits with high-efficiency synchronous rectification.
IRFS3006TRL7PP Features
Lead-Free
Enhanced body diode dV/dt and dI/dt Capability
Fully Characterized Capacitance and Avalanche SOA
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness