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IRF620STRRPBF

IRF620STRRPBF

IRF620STRRPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 800mOhm @ 3.1A, 10V ±20V 260pF @ 25V 14nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF620STRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 800mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 50W Tc
Element Configuration Single
Power Dissipation 3W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 260pF
Drain to Source Resistance 800mOhm
Rds On Max 800 mΩ
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.14000 $2.14
500 $2.1186 $1059.3
1000 $2.0972 $2097.2
1500 $2.0758 $3113.7
2000 $2.0544 $4108.8
2500 $2.033 $5082.5
IRF620STRRPBF Product Details

IRF620STRRPBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 260pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.2A amps.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 800mOhm.A turn-on delay time of 7.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF620STRRPBF Features


a continuous drain current (ID) of 5.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)


IRF620STRRPBF Applications


There are a lot of Vishay Siliconix
IRF620STRRPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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