IPW60R190P6FKSA1 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 419 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1750pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.2A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 57A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPW60R190P6FKSA1 Features

the avalanche energy rating (Eas) is 419 mJ
a continuous drain current (ID) of 20.2A
the turn-off delay time is 45 ns
based on its rated peak drain current 57A.

IPW60R190P6FKSA1 Applications

There are a lot of Infineon Technologies
IPW60R190P6FKSA1 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies