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IRFS3107TRLPBF

IRFS3107TRLPBF

IRFS3107TRLPBF

Infineon Technologies

IRFS3107TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS3107TRLPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 370W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation370W
Case Connection DRAIN
Turn On Delay Time19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9370pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 99 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 900A
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1153 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$2.76000$2208

IRFS3107TRLPBF Product Details

IRFS3107TRLPBF Description

The IRFS3107TRLPBF is a transitor. A transistor is an active current controlled semiconductor device that has three terminals - emitter, collector and base, and provides amplification and switching functions.


IRFS3107TRLPBF Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits


IRFS3107TRLPBF Benefits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free


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