STD4NK100Z

new-10%

Manufacturer part number:STD4NK100Z

Manufacturer:STMicroelectronics

Description:STD4NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD4NK100Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	Automotive, AEC-Q101, SuperMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STD4N
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	90W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	601pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	8.8A
Max Junction Temperature (Tj)	150°C
Height	2.63mm
RoHS Status	ROHS3 Compliant