IRFS3607PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFS3607PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140W
Turn On Delay Time
16 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9m Ω @ 46A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
3070pF @ 50V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
96 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
75V
Recovery Time
50 ns
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.84000
$1.84
10
$1.64100
$16.41
100
$1.31450
$131.45
500
$1.03810
$519.05
1,000
$0.83705
$0.83705
IRFS3607PBF Product Details
IRFS3607PBF Description
IRFS3607PBF is a 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. The IRFS3607PBF is applied to many fields, like Communications equipment Datacom modules Industrial Medical Personal electronics PC & notebooks.
IRFS3607PBF Features
Enhanced body diode dV/dt and dI/dt Capability
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness