IRFS7534TRLPBF

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IRFS7534TRLPBF

Manufacturer part number:IRFS7534TRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N CH 60V 195A D2PAK

Case Package:SOT-23

Datasheet:IRFS7534TRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®, StrongIRFET™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	294W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10034pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	279nC @ 10V
Rise Time	134ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	93 ns
Turn-Off Delay Time	118 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	3.7V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0024Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	944A
Avalanche Energy Rating (Eas)	775 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free