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BUK9219-55A,118

BUK9219-55A,118

BUK9219-55A,118

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 17.6m Ω @ 25A, 10V ±10V 2920pF @ 25V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

BUK9219-55A,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 114W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 219A
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.326579 $1.326579
10 $1.251489 $12.51489
100 $1.180650 $118.065
500 $1.113822 $556.911
1000 $1.050775 $1050.775
BUK9219-55A,118 Product Details

BUK9219-55A,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2920pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 400 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 219A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BUK9219-55A,118 Features


the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 219A.


BUK9219-55A,118 Applications


There are a lot of Nexperia USA Inc.
BUK9219-55A,118 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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