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IRFP32N50KPBF

IRFP32N50KPBF

IRFP32N50KPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 160mOhm @ 32A, 10V ±30V 5280pF @ 25V 190nC @ 10V 500V TO-247-3

SOT-23

IRFP32N50KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 135mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 32A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 460W Tc
Element Configuration Single
Power Dissipation 460W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 120ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 5.28nF
Drain to Source Resistance 160mOhm
Rds On Max 160 mΩ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.541371 $6.541371
10 $6.171105 $61.71105
100 $5.821797 $582.1797
500 $5.492261 $2746.1305
1000 $5.181379 $5181.379
IRFP32N50KPBF Product Details

IRFP32N50KPBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5280pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 32A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 160mOhm.A turn-on delay time of 28 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFP32N50KPBF Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 48 ns
single MOSFETs transistor is 160mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFP32N50KPBF Applications


There are a lot of Vishay Siliconix
IRFP32N50KPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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