IRG4BC10KDPBF

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Manufacturer part number:IRG4BC10KDPBF

Manufacturer:Infineon Technologies

Description:IRG4BC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC10KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	38W
Current Rating	9A
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	MOTOR CONTROL
Rise Time	32ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	100 ns
Collector Emitter Voltage (VCEO)	2.62V
Max Collector Current	9A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.39V
Turn On Time	78 ns
Test Condition	480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.62V @ 15V, 5A
Turn Off Time-Nom (toff)	410 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	49ns/97ns
Switching Energy	250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	210ns
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free