STGP10M65DF2 Description

The STGP10M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. It is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

STGP10M65DF2 Features

• 6 μs of short-circuit withstand time

• V_CE(sat) = 1.55 V (typ.) @ I_C = 10 A

• Tight parameter distribution

• Safer paralleling

• Positive V_CE(sat) temperature coefficient

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

• Maximum junction temperature: T_J = 175 °C

STGP10M65DF2 Applications

• Motor control

• UPS

• PFC

• General purpose inverter