IRG4BC10KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC10KPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
38W
Current Rating
8A
Element Configuration
Single
Power Dissipation
38W
Input Type
Standard
Power - Max
38W
Rise Time
24ns
Collector Emitter Voltage (VCEO)
2.62V
Max Collector Current
9A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
9A
Collector Emitter Saturation Voltage
2.62V
Test Condition
480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.62V @ 15V, 5A
Gate Charge
19nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
11ns/51ns
Switching Energy
160μJ (on), 100μJ (off)
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.880987
$0.880987
10
$0.831120
$8.3112
100
$0.784075
$78.4075
500
$0.739694
$369.847
1000
$0.697824
$697.824
IRG4BC10KPBF Product Details
IRG4BC10KPBF Description
IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics.
IRG4BC10KPBF Features
·Short Circuit Rated UltraFastOptimized for high operating frequencies >5.0 kHz,and Short Circuit Rated to 10us @125°CVG=15V
·Generation 41GBT design provides higher efficiency than Generation 3