SGH40N60UFDM1TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH40N60UFDM1TU Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
SG*40N60
Input Type
Standard
Power - Max
160W
Reverse Recovery Time
60ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Test Condition
300V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 20A
Gate Charge
97nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
15ns/65ns
Switching Energy
160μJ (on), 200μJ (off)
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.356592
$2.356592
10
$2.223200
$22.232
100
$2.097358
$209.7358
500
$1.978640
$989.32
1000
$1.866642
$1866.642
SGH40N60UFDM1TU Product Details
SGH40N60UFDM1TU Description
SGH40N60UFDM1TU is a member of the UFD series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input inpedance, as well as high-speed switching. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.